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论文类型：会议论文

发表时间：2011-01-01

收录刊物：CPCI-S

页面范围：1009-1011

关键字：ZnO; Photoluminescence; annealing; buffer layer

摘要：ZnO thin films with ZnO homo-buffer layer were grown on Si (111) substrates by PLD. The buffer layers, about 15 nm thick, were deposited at 300 degrees C,400 degrees C and 500 degrees C, respectively, under a base pressure of 1x10(-3) Pa. The main ZnO layers (about 400nm thick) were grown at 650 degrees C for 90 min in an oxygen ambience of 60 Pa. All the films were annealed at 500 degrees C for 20 min in an oxygen ambience of 105 Pa. PL spectra show that the PL peak intensity of the ZnO film with a homo-buffer layer gown at 300 degrees C was strongest after annealing. It means that the combination of growing homo-buffer layer at a suitable low temperature and employing appropriate post-anneal treatment is an effective method to improve the optical feature of ZnO thin film grown by PLD.