点击次数：

论文类型：期刊论文

发表时间：2010-12-15

发表刊物：APPLIED SURFACE SCIENCE

收录刊物：SCIE、EI、Scopus

卷号：257

期号：5

页面范围：1634-1637

ISSN号：0169-4332

关键字：Thin films; XPS; XANES

摘要：ZnO:N thin films were deposited on sapphire substrate by metal organic chemical vapor deposition with NH3 as N-doping sources. The reproducible p-type ZnO:N film with hole concentration of similar to 10(17) cm(-3) was successfully achieved by subsequent in situ thermal annealing in N2O plasma protective ambient, while only weak p-type ZnO:N film with remarkably lower hole concentration of similar to 10(15) cm(-3) was obtained by annealing in O-2 ambient. To understand the mechanism of the p-type doping behavior of ZnO:N film, X-ray photoelectron spectroscopy (XPS) and soft X-ray absorption near-edge spectroscopy (XANES) measurements have been applied to investigate the local electronic structure and chemical states of nitrogen atoms in ZnO:N films. (c) 2010 Elsevier B.V. All rights reserved.