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个人信息Personal Information
工程师
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学
办公地点：开发区校区教学楼C区505
联系方式：0411-62273207
电子邮箱：ymluo@dlut.edu.cn
Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition
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论文类型：期刊论文
发表时间：2014-11-01
发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
收录刊物：SCIE、EI
卷号：27
页面范围：841-845
ISSN号：1369-8001
关键字：Distributed Bragg reflectors; Silicon carbide; Ultraviolet; Metal-organic chemical vapor deposition
摘要：Crack-free AlGaN/GaN distributed Bragg reflectors (DBRs) for the near-UV region were grown on 6E-SiC substrates by metal-organic chemical vapor deposition (MOCVD). To suppress the generation of cracks, a thin SiNx interlayer was introduced between the first pair of AlGaN/GaN DBR layers. Using this approach, crack-free 30-pair Al0.2Ga0.8N/GaN DBRs were obtained with peak reflectivity of 92.8% at 388 nm and a stop-band bandwidth of 16 nm. Our results reveal that a SiNx interlayer not only decreased the tensile strain but also improved the reflectivity via suppression of cracks. (C) 2014 Elsevier Ltd. All rights reserved.