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论文类型：期刊论文

发表时间：2014-10-01

发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录刊物：SCIE、EI

卷号：25

期号：10

页面范围：4268-4272

ISSN号：0957-4522

摘要：The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition (MOCVD) was investigated. The property of GaN epilayer was investigated by atomic force microscopy, X-ray diffraction, low-temperature (10 K) photoluminescence and the Raman scattering. It is found that, as the spacing between showerhead and susceptor decreased, the growth rate increased and the tensile stress decreased. This result may be useful to control the stress in GaN thin films grown on silicon carbide substrate by MOCVD.