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论文类型：期刊论文

发表时间：2014-09-01

发表刊物：APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

收录刊物：SCIE、EI、Scopus

卷号：116

期号：4

页面范围：1561-1566

ISSN号：0947-8396

摘要：Mg-doped, 1-mu m-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of indium to magnesium (In/Mg ratio) on the quality of p-GaN thin films was investigated by atomic force microscope, X-ray diffraction, Hall measurement and secondary ion mass spectroscopy. The surface roughness, crystalline quality and hole concentrations of p-GaN present a different variation tendency below and above 0.183 In/Mg ratio. The evolution process of indium-adlayer model considering adsorption, desorption and the transformation of indium mono-adlayer was proposed to explain the above phenomenon. Indium-assisted growth method can improve surface smoothness and crystalline quality of p-GaN effectively without affecting its electrical properties.