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论文类型：期刊论文

发表时间：2008-10-01

发表刊物：CHINESE SCIENCE BULLETIN

收录刊物：SCIE、Scopus

卷号：53

期号：19

页面范围：2931-2934

ISSN号：1001-6538

关键字：ZnO; diamond; MOCVD

摘要：In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O(2) and N(2)O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600 degrees C and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.