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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2013-11-18

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：Scopus、EI、SCIE

卷号：103

期号：21

ISSN号：0003-6951

摘要：The oxidation processes of stepped SiC(0001) surfaces are studied within the ab initio atomistic thermodynamics approach. Our calculations show that a one-dimensional -Si-O-chain structure as a precursor for oxide growth on stepped SiC surfaces is formed along the step edge, promoting further oxidation of the step edges. Following the modified Deal-Grove oxidation model, we also find that the oxidation rate at steps is higher than that at terraces by three orders of magnitude. These findings give a reasonable explanation for the oxide thickness fluctuation between the step and the terrace observed in the previous experiments. (C) 2013 AIP Publishing LLC.