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赵纪军
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教授   博士生导师   硕士生导师

任职 : 三束材料改性教育部重点实验室主任

性别: 男

毕业院校: 南京大学

学位: 博士

所在单位: 物理学院

学科: 凝聚态物理

电子邮箱: zhaojj@dlut.edu.cn

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Hole Defects and Nitrogen Doping in Graphene: Implication for Supercapacitor Applications

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论文类型: 期刊论文

发表时间: 2013-11-13

发表刊物: ACS APPLIED MATERIALS & INTERFACES

收录刊物: SCIE、EI、PubMed、Scopus

卷号: 5

期号: 21

页面范围: 11184-11193

ISSN号: 1944-8244

关键字: supercapacitors; graphene; hole; doping

摘要: One great challenge for supercapacitor is to achieve high energy capacity and fast charge/discharge rates simultaneously. Porous graphene with large surface area is a promising candidate for electrode materials of supercapacitor. Using first-principles calculations and non-equilibrium Green's function technique, we have explored the formation energies, mechanical properties, diffusion behaviors and electrical conductance of graphene sheets with various hole defects and/or nitrogen doping. Interestingly, graphene sheets with pyridinic-like holes (especially hexagonal holes) can be more easily doped with nitrogen and still retain the excellent mechanical properties of pristine graphene that is beneficial for the long cycle life. Porous graphene electrode with moderate hole diameter of 4.2-10 angstrom facilitates efficient access of electrolyte and exhibit excellent rate capability. In addition, doping with nitrogen as electron donors or proton attractors leads to charge accumulation and generates higher pseudocapacitance. Transmission coefficients of N-doped graphene sheets with pyridinic-like holes are only moderately reduced with regard to that of pristine geometry parameters. Overall, N-doped graphene with pyridinic-like holes exhibits energy storage in supercapacitor devices.

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