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论文类型： 期刊论文

发表时间： 2009-04-01

发表刊物： SOLID STATE COMMUNICATIONS

收录刊物： SCIE、EI

卷号： 149

期号： 15-16

页面范围： 638-640

ISSN号： 0038-1098

关键字： Amorphous semiconductor; Optical property; Dielectric function

摘要： The optical properties of amorphous group III-V compound semiconductors were investigated through the first principles calculations. The imaginary parts (epsilon(2)) of dielectric function for amorphous GaAs, InAs, and InSb are given, respectively. There is a single broad peak found in the epsilon(2) spectrum. By comparing with the available experimental data of a-GaAs, it is found that the maximum of the epsilon(2) spectrum is sensitive to the topological local structures of amorphous materials. By comparison of the epsilon(2) spectrum for amorphous sample to that of the crystal, the dependence of the E(1) and E(2) peaks of the crystal on the local structures of amorphous sample becomes evident. The calculated results are in agreement with the available experimental data. The corresponding results should be generalized to cover the amorphous group III-V semiconductors. (C) 2009 Elsevier Ltd. All rights reserved.