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Degree:Doctoral Degree
School/Department:机械工程学院

zhuxianglong

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Gender:Male

Alma Mater:大连理工大学

Paper Publications

Surface integrity and removal mechanism of silicon wafers in chemo-mechanical grinding using a newly developed soft abrasive grinding wheel
Date of Publication:2017-06-01 Hits:

Indexed by:期刊论文
Journal:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Included Journals:SCIE、EI
Volume:63
Page Number:97-106
ISSN No.:1369-8001
Key Words:Silicon wafer; Chemo-mechanical grinding; Soft abrasive; Surface finish; Subsurface damage
Abstract:A new soft abrasive grinding wheel (SAGW) used in chemo-mechanical grinding (CMG) was developed for machining silicon wafers. The wheel consisted of magnesia (MgO) soft abrasives, calcium carbonate (CaCO3) additives and magnesium oxychloride bond. Surface topography, roughness and subsurface damage of the silicon wafers ground using the new SAGW were comprehensively investigated. The results showed that the grinding with the new SAGW produced a surface roughness of about 0.5 nm in R-a and a subsurface damage layer of about 10 nm in thickness, which is comparable to that produced by chemo-mechanical polishing. This study also revealed that the chemical reactions between MgO abrasive, CaCO3 additives and silicon material did occur during grinding, thereby generating a soft reactant layer on the ground surface. The reactant layer was easily removed during the grinding process.
Date of Publication:2017-06-01