Journal:人工晶体学报
Issue:12
Page Number:3439-3443,3454
ISSN No.:1000-985X
Abstract:A finite element model (FEM) was presented to calculate the GIDs of wafers. The model includes the effect of initial stress. The suitability of the inverting method was discussed for wafers after polishing and grinding by the model and experiments. The results show that the method is suitable for polished wafers. The difference between the GIDs obtained using the model and the inverting method is less than 1 μ m. The error is larger than 5% of the maximum GID value for the 300 mm diameter and 394 μm thickness wafer ground by #5000 diamond wheel. For the 200 mm diameter and 194 μm thickness wafer ground by #2000 diamond wheel bifurcation occurs as the residual stress is larger than the critical value. The method can not be used since the wafer flatness and the GID could not be superposed. © 2015, Chinese Ceramic Society. All right reserved.
Note:新增回溯数据
Date of Publication:2015-01-01