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一种用于等离子体刻蚀的元胞-水平集联合模拟方法

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First Author:Yan Jun

Disigner of the Invention:严培,daizhongling,杨明强,张赛谦

Application Number:CN201210489760.4

Authorization Date:2012-11-27

Authorization number:CN103065038A

Pre One:一种用于等离子体刻蚀的元胞-水平集联合模拟方法
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