Hits:
First Author:Qin Fuwen
Disigner of the Invention:machunyu,卢康,baiyizhen,Lin Guoqiang,Dejun WANG
Application Number:CN201810576913.6
Authorization Date:2018-05-30
Authorization number:CN108831823A
Pre One:采用金属基片制备垂直GaN基LED芯片的设备
Next One:一种提高SiC MOSFET器件性能稳定性的制作方法