Hits:
First Author:Qin Fuwen
Disigner of the Invention:Lin Guoqiang,刘勤华
Application Number:2002 1 0247144.8
Authorization Date:2012-07-17
Authorization number:ZL 2002 1 0247144.8
Pre One:金属基片垂直GaN基LED芯片及其制备方法
Next One:柔性透明聚酰亚胺衬底上的氮化铟镓薄膜及其制备方法