Current position: Home >> Scientific Research >> Patents

金属基片垂直GaN基LED芯片及其制备方法

Hits:

First Author:Qin Fuwen

Disigner of the Invention:Lin Guoqiang,刘勤华

Application Number:201210247142.9

Authorization Date:2012-07-17

Authorization number:ZL201210247142.9

Pre One:一种柔性聚酰亚胺衬底上的氮化镓基薄膜及其制备方法

Next One:采用金属基片制备垂直GaN基LED芯片的设备