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一种提高SiC MOSFET器件高、低温稳定性的钝化方法

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First Author:Dejun WANG

Disigner of the Invention:孙雨浓,yangchao,Qin Fuwen

Affilication of Author(s):电子信息与电气工程学部

Application Number:CN109103078A

Authorization number:CN201811163899.3

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