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一种提高SiC MOSFET器件性能稳定性的制作方法

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First Author:Dejun WANG

Disigner of the Invention:Qin Fuwen,yangchao,尹志鹏

Affilication of Author(s):电子信息与电气工程学部

Application Number:CN109003895A

Authorization number:CN201810796522.5

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