Current position: Home >> Scientific Research >> Patents

金属间化合物填充三维封装垂直通孔及其制备方法

Hits:

First Author:Mingliang Huang

Disigner of the Invention:Zhao Ning,张志杰,yangfan,张飞,Zhao Jie,mahaitao

Application Number:CN201510069932.6

Authorization Date:2015-02-09

Authorization number:CN104701283A

Pre One:一种三维封装芯片堆叠用金属间化合物键合方法及键合结构

Next One:一种金属间化合物薄膜的制备方法