大连理工大学  登录  English 
黄明亮
点赞:

教授   博士生导师   硕士生导师

性别: 男

毕业院校: 大连理工大学

学位: 博士

所在单位: 材料科学与工程学院

学科: 材料学. 功能材料化学与化工. 化学工程

办公地点: 材料楼330办公室

联系方式: 0411-84706595

电子邮箱: huang@dlut.edu.cn

手机版

访问量:

开通时间: ..

最后更新时间: ..

当前位置: 黄明亮 >> 科学研究 >> 论文成果
Effect of electromigration on intermetallic compound formation in Cu/Sn/Cu interconnect

点击次数:

论文类型: 会议论文

发表时间: 2009-08-10

收录刊物: EI、Scopus

页面范围: 666-669

摘要: The effect of electromigration on the solid state interfacial reaction of pure Sn and Cu was investigated. Two electron current densities (1.0  104A/cm2 and 5.0  103A/cm 2) were applied to line-type Cu/Sn/Cu interconnect at 150  C. The same types of intermetallic compound (IMC), Cu6Sn5 and Cu3Sn, formed at the Sn/Cu interfaces independent of electric current. A high current density caused a polarity effect where the IMC layer at the anode grew significantly thicker than that at the cathode. The growth of IMC was enhanced by electric current at the anode, comparing with that of the samples without applying current. The growth of IMC at the anode followed a parabolic growth rule. After current stressing for 100 hours with a current density of 1.0  104A/cm2, microcrack formed at the interface between IMC and solder at the cathode side, while there was no crack formed even after stressing for 200h with a current density of 5.0  10 3A/cm2. ?2009 IEEE.

辽ICP备05001357号 地址:中国·辽宁省大连市甘井子区凌工路2号 邮编:116024
版权所有:大连理工大学