点击次数：

论文类型：期刊论文

发表时间：2017-08-01

发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物：SCIE、EI、Scopus

卷号：66

页面范围：170-175

ISSN号：1369-8001

关键字：Bulk Si; TGZM; Si source; Growth rate

摘要：The continuous growth of bulk Si in the Si-Al alloy using the temperature gradient zone melting (TGZM) technique is an effective method to separate the primary Si from the eutectic structure in the Si Al alloy and to remove the majority of impurities, such as metals, B and P elements during the alloy refining process. A Si source was used to maintain the Si concentration in the alloy melt and reduce the influence of the solute-transmitting process by temperature gradient due to the precipitation of the primary Si. Bulk Si could be obtained in the Si-Al alloy through the TGZM process. With the initial temperature of 1461 K and temperature gradient of 1.81 K/mm, the actual growth rate of the bulk Si was 0.000186 mm/s. No inclusions and alloy phases were observed in the bulk Si. The removal rate of Fe impurity was 99.9% and the removal fraction of B, P and Al was 71.2%, 90.2%, 78.5% respectively.