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Indexed by:期刊论文

Date of Publication:1993-05-01

Journal:JOURNAL OF APPLIED PHYSICS

Included Journals:SCIE、Scopus

Volume:73

Issue:9

Page Number:4171-4175

ISSN No.:0021-8979

Abstract:Plasma source ion implantation is a process in which a target is immersed in a plasma and a series of large negative-voltage pulses are applied to it to extract ions from the plasma and implant them into the target. A Monte Carlo simulation model is developed to study the energy and angle distributions of ions at the planar target for higher pressures of the neutral gas. Cross sections of the charge exchange and momentum transfer that depend on the ion energy are taken into account precisely. The energy and angle distributions of N2+ at the target during the sheath edge evolution for the different pressures are determined.