location: Current position: Home >> Scientific Research >> Paper Publications

Simulation of atomic layer etching of Si in inductively coupled argon/chlorine plasmas with tailored bias voltage waveforms

Hits:

Indexed by:会议论文

Date of Publication:2016-01-01

Page Number:51-51

Pre One:Effects of oxygen concentration on atmospheric pressure dielectric barrier discharge in Argon-Oxygen Mixture

Next One:Influence of dielectric materials on uniformity of large-area capacitively coupled plasmas for N2/Ar discharges