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Indexed by:期刊论文

Date of Publication:2011-10-01

Journal:PLASMA SCIENCE & TECHNOLOGY

Included Journals:Scopus、SCIE、EI

Volume:13

Issue:5

Page Number:567-570

ISSN No.:1009-0630

Key Words:non-thermal plasma; atmospheric pressure; polysilicon; optical emission spectrum

Abstract:Non-thermal plasma at atmospheric pressure was explored for the preparation of polysilicon from SiCl4. The power supply sources of positive pulse and alternating current (8 kHz and 100 kHz) were compared for polysilicon preparation. The samples prepared by using the 100 kHz power source were crystalline silicon. The effects of H-2 and SiCl4 volume fractions were investigated. The optical emission spectra showed that silicon species played an important role in polysilicon deposition