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论文类型：期刊论文

发表时间：2013-04-01

发表刊物：CHINESE PHYSICS B

收录刊物：SCIE、EI、ISTIC、Scopus

卷号：22

期号：4

ISSN号：1674-1056

关键字：capacitively coupled plasma; process conditions effects; SiH4/NH3/N-2 discharges

摘要：A two-dimensional (2D) fluid model is presented to study the behavior of silicon plasma mixed with SiH4, N-2, and NH3 in a radio-frequency capacitively coupled plasma (CCP) reactor. The plasma-wall interaction (including the deposition) is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N-2/NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.