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氮化与缓冲层对普通玻璃上生长GaN的影响

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Indexed by:会议论文

Date of Publication:2008-01-01

Page Number:160-160

Pre One:在镀铝玻璃衬底上低温沉积GaN薄膜的结晶特性

Next One:基于电子回旋共振-等离子体增强金属有机物化学气相沉积技术生长GaMnN稀磁半导体的研究
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