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Indexed by:期刊论文
Date of Publication:2012-01-01
Journal:Vacuum (2012)
Volume:86
Issue:8
Page Number:1102-1106
Pre One:Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD
Next One:The Preparation and Characteristics of InxGa1-xN (0.06 <= x <= 0.58) Films Deposited by ECR-PEMOCVD