Hits:
Indexed by:会议论文
Date of Publication:2015-10-30
Page Number:118-119
Key Words:SiC半导体;SiO2/SiC;界面态密度;表面预处理;表面态
Pre One:电子回旋共振氮等离子体氧化后退火对4H-SiC MOS电容TDDB特性的影响
Next One:Enhanced TiC/SiC Ohmic contacts by electronic cyclotron resonance hydrogen plasma pretreatment and low temperature post-annealing
