Release Time:2019-10-10  Hits:

Indexed by: Journal Article

Date of Publication: 2002-04-30

Journal: 半导体光电

Included Journals: CSCD、ISTIC、PKU

Volume: 23

Issue: 2

Page Number: 114-117

ISSN: 1001-5868

Key Words: ECR-PEMOCVD;量子点;AFM;GaN

Abstract: 报道了用电子回旋共振(ECR)等离子体增强金属有机化学气相沉积(PEMOCVD)方法在GaAs(001)衬底上成功地制备出GaN量子点.原子力显微镜(AFM)测量表明成核密度高达1010cm-2,量子点直径约为30nm.采用300℃低温氮化,600℃退火和500℃缓冲层,600℃退火工艺制备.GaN量子点的密度和大小由制备温度和时间所控制.最后讨论了量子点成核的机制.