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Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors

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Indexed by:Journal Papers

Date of Publication:2020-01-01

Journal:Applied Surface Science

Volume:513

Page Number:145837-145837

Pre One:Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows

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