大连理工大学主页平台管理系统 Qin Fuwen Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD Home

Current position: Home >> Scientific Research >> Paper Publications

Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors

Release Time:2021-06-04 Hits:

Indexed by: Journal Article

Date of Publication: 2021-03-18

Journal: Applied Surface Science

Volume: 31

Issue: 30

Page Number: 147312-147312

Prev One:Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Home

Scientific Research

Teaching Research

Awards and Honours

Enrollment Information

Student Information

My Album

Blog

Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors