location: Current position: Home >> Scientific Research >> Paper Publications

Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors

Hits:

Indexed by:期刊论文

Date of Publication:2021-03-18

Journal:Applied Surface Science

Volume:31

Issue:30

Page Number:147312-147312

Pre One:Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Next One:GO/TiO2-g-C3N4纳米复合材料的制备及可见光催化性