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Publishers Note: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma [Appl. Phys. Lett. 104, 202101 (2014)]

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Date of Publication:2022-10-08

Journal:APPLIED PHYSICS LETTERS

Affiliation of Author(s):物理学院

Volume:104

Issue:26

Page Number:269902-269902

Pre One:Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films

Next One:Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure
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