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Microstructure and cathodoluminescence study of GaN nanowires without/with P-doping

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Date of Publication:2022-10-07

Journal:CRYSTAL RESEARCH AND TECHNOLOGY

Affiliation of Author(s):材料科学与工程学院

Volume:47

Issue:2

Page Number:207-212

ISSN No.:0232-1300

Pre One:衬底氮化时间对玻璃衬底上低温沉积GaN薄膜结晶性的影响

Next One:Model of the magnetic mirror effect in the unbalanced magnetron sputtering ion beams
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