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在GaAs衬底表面生长GaN过程中的氮化新方法

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Date of Publication:2022-10-10

Journal:半导体光电

Volume:24

Issue:1

Page Number:45-47

ISSN No.:1001-5868

Note:新增回溯数据

Pre One:在镀铝玻璃衬底上低温沉积GaN薄膜的结晶特性

Next One:基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性
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