Current position: Home >> Scientific Research >> Paper Publications

在GaAs衬底表面生长GaN过程中的氮化新方法

Release Time:2022-12-09  Hits:

Date of Publication: 2022-10-10

Journal: 半导体光电

Volume: 24

Issue: 1

Page Number: 45-47

ISSN: 1001-5868

Note: 新增回溯数据

Prev One:在镀铝玻璃衬底上低温沉积GaN薄膜的结晶特性

Next One:基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性