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Indexed by:期刊论文

Date of Publication:2013-12-01

Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Included Journals:SCIE、EI、Scopus

Volume:24

Issue:12

Page Number:5069-5074

ISSN No.:0957-4522

Abstract:Gallium nitride (GaN) films were deposited on Ni metal substrate using electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system. With this approach, highly c-oriented GaN films with smooth surface were obtained at an extremely low temperature of similar to 480 A degrees C. The trimethyl gallium (TMGa) flux dependent structural, morphological, and optical characteristics of GaN films were investigated by X-ray diffraction analysis, reflection high energy electron diffraction, atomic force microscopy and photoluminescence analysis. The results indicate that it is feasible to deposit GaN films on Ni metal substrate under the proper deposition procedures. The high quality GaN films with high c-axis orientation and strong ultraviolet emission peak are successfully achieved under the optimized TMGa flux of 1.2 sccm. The GaN/Ni structure has great potential for the development of high power devices with excellent heat dissipation.