Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-08-05

Journal: APPLIED PHYSICS LETTERS

Included Journals: Scopus、EI、SCIE

Volume: 103

Issue: 6

ISSN: 0003-6951

Abstract: We proposed an electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing process for SiO2/4H-SiC interface and investigated its effect on the electrical properties of the interface. The results indicate that this process could significantly reduce the density of interface traps (D-it) without degrading the oxide insulating properties. The best result is achieved for the 10-min annealed sample. The N and H, which are only concentrated at the SiO2/SiC interface, both play roles in reducing the D-it. N is more effective in passivating the shallow interface traps, while H is more effective in passivating the deep interface traps. (C) 2013 AIP Publishing LLC.