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Indexed by:期刊论文

Date of Publication:2013-07-15

Journal:APPLIED PHYSICS LETTERS

Included Journals:SCIE、EI、Scopus

Volume:103

Issue:3

ISSN No.:0003-6951

Abstract:We investigated the Schottky barrier of Pt/4H-SiC contact as a function of 4H-SiC surface properties which effectively controlled by electronic cyclotron resonance hydrogen plasma pretreatment for different periods and annealing. It is found that the effective barrier height monotonically increases with decreasing the degree of Fermi level pinning. Electrically homogeneous contacts are observed when the Fermi level (FL) is "pinned (Bardeen limit)" and "free-pinned (Schottky limit)." However, a partial pinning of FL leads to Gaussian distribution of inhomogeneous barrier height. These results could be correlated with changes in the magnitude and spatial distribution of surface state density after different pretreatments. (C) 2013 AIP Publishing LLC.