Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2011-02-01

Journal: CHINESE PHYSICS LETTERS

Included Journals: ISTIC、SCIE、Scopus

Volume: 28

Issue: 2

ISSN: 0256-307X

Abstract: Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement. The quality of the as-grown InN films is markedly improved at the optimized N-2 flux of 100 sccm. The results show that the properties of the films are strongly dependent on N-2 flux.