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Indexed by:期刊论文

Date of Publication:2011-02-01

Journal:CHINESE PHYSICS LETTERS

Included Journals:Scopus、SCIE、ISTIC

Volume:28

Issue:2

ISSN No.:0256-307X

Abstract:Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement. The quality of the as-grown InN films is markedly improved at the optimized N-2 flux of 100 sccm. The results show that the properties of the films are strongly dependent on N-2 flux.