Release Time:2019-03-09 Hits:
First Author: Qin Fuwen
Disigner of the Invention: 刘勒华,Lin Guoqiang
Authorization Date: 2011-07-17
Authorization Number: 201220346069
Prev One:金属基片垂直GaN基LED芯片及其制备方法
Next One:ZnO-GaN复合衬底GaN发光器件及其制备方法