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一种降低SiO<sub>2</sub>/SiC界面态密度的方法

Release Time:2022-10-20  Hits:

First Author: Dejun WANG

Disigner of the Invention: 李青洙,Qin Fuwen

Institution: 电子信息与电气工程学部

Application Number: CN105304498A

Authorization Number: CN201510671058.3

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