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一种SiC MOSFET器件低温稳定性的评价测试方法

Release Time:2022-10-20  Hits:

First Author: Dejun WANG

Disigner of the Invention: 孙雨浓,杨超,Qin Fuwen

Institution: 电子信息与电气工程学部

Application Number: CN109270423A

Authorization Number: CN201811163919.7

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