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New insight into the mechanism of enhanced photo-Fenton reaction efficiency for Fe-doped semiconductors: A case study of Fe/g-C3N4

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Date of Publication:2022-10-07

Journal:CATALYSIS TODAY

Affiliation of Author(s):化工学院

Volume:371

Page Number:58-63

ISSN No.:0920-5861

Key Words:"Photo-Fenton; Semiconductor; Doping; Promotion effect; Fe/g-C3N4"

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