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论文类型：期刊论文

发表时间：2018-04-25

发表刊物：JOURNAL OF PHYSICS D-APPLIED PHYSICS

收录刊物：SCIE、EI

卷号：51

期号：16

ISSN号：0022-3727

关键字：RRAM; SiOx; HWCVD; conduction mechanism

摘要：We proposed and fabricated an Ag/SiOx/p-Si sandwich structure, in which amorphous SiOx films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I-V properties of this structure transfer from non-switching to switching operation as the SiOx deposition temperature increased. The device with SiOx deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiOx active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I-V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiOx film deposition technology by conducting HWCVD from TEOS.