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论文类型：期刊论文

发表时间：2015-02-09

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：106

期号：6

ISSN号：0003-6951

摘要：In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/AlxOy/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in AlxOy layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism. (C) 2015 AIP Publishing LLC.