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论文类型：期刊论文

发表时间：2013-11-18

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：103

期号：21

ISSN号：0003-6951

摘要：beta-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH4 diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown beta-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO2/beta-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level. (C) 2013 AIP Publishing LLC.