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论文类型：期刊论文

发表时间：2013-08-15

发表刊物：SURFACE & COATINGS TECHNOLOGY

收录刊物：SCIE、EI、Scopus

卷号：228

页面范围：148-153

ISSN号：0257-8972

关键字：Si nanocrystals embedded in SiC; HWCVD; Nucleation density

摘要：The thin films of silicon nanocrystals (Si-NC) embedded in silicon carbide (SiC) matrix (Si-NC:SiC) were developed by using hot-wire chemical vapor deposition (HWCVD) from silane (SiH4) and methane (CH4) mixture gases diluted by hydrogen (H-2). This method avoids the co-precipitation of Si-NCs and SiC-NCs from a high-temperature annealing process. According to the classical theory of nucleation, this paper experimentally investigates the possibilities to increase the density of Si-NCs by optimizing two processing parameters (ratio of SiH4 to CH4 and working gas pressure). Using Raman spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Fourier transform infra-red spectroscopy (FTIR), we characterized the grain size, crystal volume fraction, topography and bond configurations of as-deposited films. The experimental results demonstrate that increasing the working gas pressure can lead to higher density of Si-NCs, while increasing the ratio of SiH4 to CH4 can only increase the grain size, which is consistent with the mechanism of nucleation and growth of Si-NCs. This method can be used to improve the density of Si-NCs embedded in SiC matrix deposited by CVD without high-temperature annealing process. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved.