刘艳红

个人信息Personal Information

副教授

硕士生导师

性别:女

毕业院校:大连理工大学

学位:博士

所在单位:物理学院

学科:凝聚态物理. 微电子学与固体电子学

办公地点:物理学院431

联系方式:15904250968

电子邮箱:dbd01@dlut.edu.cn

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Adjusted surface work function of InN films annealed at vacuum and at high-pressure N-2 conditions

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论文类型:期刊论文

发表时间:2013-03-01

发表刊物:MATERIALS LETTERS

收录刊物:SCIE、EI

卷号:95

页面范围:135-138

ISSN号:0167-577X

关键字:Surface work function; InN; Thin films; Surfaces; Annealing

摘要:Annealing studies were performed to investigate the effects of heat treatment on InN thin films by changing the annealing condition from vacuum to high pressure N-2. A significant variation of similar to 400 meV in the surface work function was observed for InN films. The basic principles of Kelvin probe measurement revealed that the surface band bending E-SBB is crucial in investigating the significant changes of surface work function on the InN. The stoichiometric ratio imbalance of In and N was indirectly determined to be the main cause of the variation in band bending by analyzing the X-ray diffraction and energy dispersive X-ray measurements. Thus, the annealing treatment could be an effective method to adjust the surface work function of InN by changing the annealing condition from vacuum to high pressure N-2. (C) 2012 Elsevier B.V. All rights reserved.