个人信息Personal Information
教授
博士生导师
硕士生导师
性别:女
毕业院校:大连理工大学
学位:博士
所在单位:材料科学与工程学院
学科:材料物理与化学
办公地点:三束实验室2号楼302室
联系方式:0411-84708380-8302
电子邮箱:lixiaona@dlut.edu.cn
Addition of strong interaction element Fe(or Sn) to improve the stability of solid solution Cu(Ge) film
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论文类型:期刊论文
发表时间:2017-07-15
发表刊物:SURFACE & COATINGS TECHNOLOGY
收录刊物:SCIE、EI、Scopus
卷号:321
页面范围:328-335
ISSN号:0257-8972
关键字:Strong interaction; Stability; Film; Magnetron sputtering
摘要:In order to apply solid solution Cu(Ge) film to a barrierless structure for Cu interconnection, a binary Cu(Ge) solid solution film was prepared on the single-crystal Si(100) substrate by magnetron sputtering, followed by vacuum annealing. It was found that the individual addition of Ge led to serious interfacial diffusion promoting Cu-Si reaction. Therefore, Fe (or Sn) was chosen as the third element to prepare Cu(Ge-Fe(or Sn)) ternary films. The strong interactions from the negative mixing enthalpy between Ge-Fe(or Sn) stabilizes Ge in the Cu lattice, improving the thermal stability of the film. After 400 degrees C/1 h annealing, the Cu99.19Ge0.73Fe0.08 and CU99.22Ge0.69Fe0.09 films with the largest lattice distortion remained stable with the resistivity as low as 2.54-2.80 mu Omega cm. For Cu(Ge-Sn) films, the Cu-Si reaction did not occur in the Cu99.01Ge0.90Sn0.09 films with the largest lattice distortion, and the resistivity was maintained at 2.51 mu Omega cm. The results proved that strong interaction elements Fe and Sn could prevent the diffusion of Ge and enhance the stability of Cu alloy films. The addition of small atomic radius element Fe, which has large diffusion activation energy and small diffusion coefficient in Cu, could inhibit diffusion for a wide range of composition. (C) 2017 Elsevier B.V. All rights reserved.