李晓娜

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:女

毕业院校:大连理工大学

学位:博士

所在单位:材料科学与工程学院

学科:材料物理与化学

办公地点:三束实验室2号楼302室

联系方式:0411-84708380-8302

电子邮箱:lixiaona@dlut.edu.cn

扫描关注

论文成果

当前位置: 中文主页 >> 科学研究 >> 论文成果

Ni-V(or Cr) Co-addition Cu alloy films with high stability and low resistivity

点击次数:

论文类型:期刊论文

发表时间:2018-02-01

发表刊物:MATERIALS CHEMISTRY AND PHYSICS

收录刊物:SCIE、EI

卷号:205

页面范围:253-260

ISSN号:0254-0584

关键字:Film; Copper alloy; Stability; Magnetron sputtering; Resistivity

摘要:In order to inhibit Cu, interconnecting in ultra-large-scale integration, from diffusing with surrounding dielectric materials and enhance its chemical inertness and maintain its excellent electrical performance as well. In this paper, the stable solid solution cluster-plus-glue-atom model was used to design the composition of Cu seed layers. In this model, insoluble element V (or Cr) was dissolved in Cu via Ni which is soluble both with Cu and V(or Cr), causing a certain degree of lattice distortion to improve the stability of Cu film. Cu-Ni-V(or Cr) alloy films were deposited directly on single crystal Si(100) substrates, without a designated barrier layer, subsequently annealed in vacuum. For the (V0.8/12.81Ni12/12.8)(0.5)Cu-99.5 (at.%) film with the addition of large atomic radius element V, it showed the minimum electrical resistivity of 3.2 mu Omega cm after 500 degrees C/1 h annealing; after 500 degrees C/40 h annealing, no diffusion between Cu and Si was observed and the resistivity remained stable. Likewise, the (Cr1.4/13.4Ni12/13.4)(0.4)Cu-99.6 film also remained a minimum resistivity of 3.0 mu Omega.cm after annealing at 500 degrees C for 40 h. The greater the relative lattice distortion is in a single system, the higher the stability and the lower resistivity achieved. Obviously, the stability of Cu alloy film which satisfy the requirements of the microelectronics industry can be improved dramatically by the additive of Ni and V (or Cr) conform to the proportion of clusters. (C) 2017 Elsevier B.V. All rights reserved.