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论文类型：会议论文

发表时间：2007-11-05

收录刊物：EI、CPCI-S

卷号：561-565

期号：PART 2

页面范围：1161-1164

关键字：beta-FeSi2; magnetron sputtering; TEM; semiconductor; metallic silicide

摘要：Fe/Si multi-layer films were fabricated on Si (100) substrates utilizing radio frequency magnetron sputtering system. Si/beta-FeSi2 structure was found in the films after the deposition. Structural characterization of Fe-silicide sample was performed by transmission electron microscopy, to explore the dependence of the microstructure of beta-FeSi2 film on the preparation parameters. It was found that beta-FeSi2 particles were formed after the deposition without annealing, whose size is less than 20nm with a direct band-gap of 0.94eV in room temperature. After annealing at 850 degrees C, particles grow lager, however the stability of thin films was still good.