点击次数：

论文类型：期刊论文

发表时间：2012-12-01

发表刊物：JOURNAL OF ELECTRONIC MATERIALS

收录刊物：Scopus、SCIE、EI

卷号：41

期号：12

页面范围：3447-3452

ISSN号：0361-5235

关键字：Cu alloys; thin film; electrical conductivity; silicide formation; cluster-plus-glue-atom model

摘要：Cu-Ni-Mo alloys were investigated to increase thermal stability against silicide formation. The alloy compositions were chosen such that an insoluble element (Mo) solute was dissolved into Cu via a third element Ni which is soluble in both Cu and Ni. Thin-film Cu-Ni-Mo alloys were prepared by magnetron sputtering. The films with Mo/Ni ratio of 1/12 exhibited low electrical resistivities in combination with high thermal stabilities against silicide formation, in support of a tentative "cluster-plus-glue-atom" model for stable solid solutions. In particular, a (Mo1/13Ni12/13)(0.3)Cu-99.7 sample reached a minimum resistivity of 2.6 mu Omega cm after 400A degrees C/1 h annealing and remained highly conductive with resistivities below 3 mu Omega cm even after 400A degrees C/40 h annealing. These alloys are promising candidates for future interconnect materials.